Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 · kind B2 · utility
111Cited by
1References
44Claims
0Family size
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Key dates
| Filing date | Jun 16, 2005 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | May 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.