Polarity inversion of type-II InAs/GaSb superlattice photodiodes
US7692183B2 · kind B2 · utility
3Cited by
1References
6Claims
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Key dates
| Filing date | Mar 7, 2008 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Apr 22, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also serves as an effective n-contact layer. The contact layer has been optimized to improve device performance, most notably performance that is similar to traditional N-on-P structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.