Ultrasonic sensor comprising a metal/ferroelectric/metal/insulator/semiconductor structure
US7692257B2 · kind B2 · utility
5Cited by
9References
6Claims
0Family size
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Key dates
| Filing date | Mar 5, 2004 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Mar 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/079
Abstract
A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown γ-Al2O3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single crystal Pt thin film (3) is disposed on the γ-Al2O3 single crystal film (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.