Optical sensor element and method for driving the same
US7692261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2007 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Feb 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity concentration than the p-type semiconductor region and the n-type semiconductor region; an anode electrode formed on the insulation film and connected to the p-type semiconductor region; and a cathode electrode formed on the insulation film and connected to the n-type semiconductor region. A reverse bias voltage Vb is applied when detecting the photocurrent, the reverse bias voltage Vb satisfying a following relation.V1<Vb<Vsat
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.