Semiconductor devices with improved heat dissipation and method for fabricating same
US7692289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2002 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Jul 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to improving the efficiency of removing heat from semiconductor devices. In addition, the method of manufacturing the improved devices has the potential of eliminating a key step in the traditional production process where the chips are highly susceptible to mechanical damage. A semiconductor element includes a semiconductor substrate having a heat removal side and a heat producing region, and at least one superstrate semiconductor layer defining the heat producing region. The heat removal side of the semiconductor substrate includes at least one recess region which extends closer to the heat-generating region than the remainder of the heat removal surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.