Multilayer storage class memory using externally heated phase change material
US7692959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2008 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Sep 2, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/74
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-layer, phase change material (PCM) memory apparatus includes a plurality of semiconductor layers sequentially formed over a base substrate, wherein each layer comprises an array of memory cells formed therein, each memory cell further including a PCM element, a first diode serving as a heater diode in thermal proximity to the PCM element and configured to program the PCM element to one of a low resistance crystalline state and a high resistance amorphous state, and a second diode serving a sense diode for a current path used in reading the state of the PCM element; the base substrate further including decoding, programming and sensing circuitry formed therein, with each of the plurality of semiconductor layers spaced by an insulating layer; and intralayer wiring for communication between the base substrate circuitry and the array of memory cells in each of the semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.