Source-biased SRAM cell with reduced memory cell leakage
US7692964B1 · kind B1 · utility
10Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2006 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Jun 12, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/417
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Static Random Access Memory (SRAM) cell having a source-biasing mechanism for leakage reduction. In standby mode, the cell's wordline is deselected and a source-biasing potential is provided to the cell. In read mode, the wordline is selected and responsive thereto, the source-biasing potential provided to the cell is deactivated. Upon completion of reading, the source-biasing potential is re-activated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.