Semiconductor laser diode having ridge
US7693200B2 · kind B2 · utility
0Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2007 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | May 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/04257
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.