Plasmostor: a-metal-oxide-si field effect plasmonic modulator
US7693363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2009 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Mar 24, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention is a system and method for performing all-optical modulation. A semiconductor layer having a defined thickness has an insulator adjacent one surface of the semiconductor. Conductive layers are provided adjacent the semiconductor layer and the insulator. A photodetector is provided to generate an electric field across the conductive layers in response to an input optical gate signal. An input optical signal is modulated by interaction with a plasmon wave generated at the semiconductor/conductive layer interface. By defining the thickness of the semiconductor layer, a desired wavelength of light supports the plasmon waves. Operation of the all-optical modulator requires the provision of an input optical signal of a desired wavelength and the provision of a gate optical signal. An output optical signal is recovered and can be used to store, display or transmit information, for example over a fiber optic communication system, such as a telecommunication system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.