Method for optimization of optical proximity correction
US7694268B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2007 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Mar 11, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of designing and forming a mask used for projecting an image of an integrated circuit design. After providing a mask element corresponding to a portion of a design of an integrated circuit layout, the method includes correcting the mask element using OPC techniques, and fracturing the OPC-corrected mask element into a plurality of polygonal segments. The method then includes identifying along an edge of the mask element a polygon edge having a thickness less than that which can be normally reproduced by a mask writer, and modifying configuration of the identified mask element segment to add or subtract length to an end of the polygon to create a corrected mask element having increased resolution by the mask writer. The method then includes using an electron beam or other mask writer to form a mask having the mask element with modified configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.