Slurry composition for chemical mechanical polishing and precursor composition thereof
US7695637B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2006 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Jan 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed are a slurry composition for chemical mechanical polishing and a precursor composition thereof. The polishing slurry composition includes deionized water, abrasive particles, a pH-adjusting agent and a surfactant, wherein the surfactant includes two or more ionic moieties and two or more lipophilic groups. The polishing slurry composition can polish convex surfaces of a semiconductor having a step height at a higher rate than the polishing rate for concave surfaces acting as polishing stop layers of the semiconductor so that the polishing can be self-stopped, reduces the occurrence of surface defects after the polishing process, and has a high degree of polishing planarization and good dispersion stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.