Deposition method for oxide thin film or stacked metal thin films using supercritical fluid or subcritical fluid, and deposition apparatus therefor
US7695760B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 1, 2005 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Oct 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
What is provided is a method and an apparatus for easily forming a multilayer structure of conductive metal thin films while forming a metal oxide thin film regardless of the conductivity of a substrate. A thin film of conductive metal is laminated by: dissolving metal precursors for a metal oxide to be formed and an oxidant to oxidize the metal precursors in a supercritical fluid or subcritical fluid; forming a metal oxide thin film by an oxidation reaction on the surface of a substrate in the supercritical fluid or subcritical fluid; then, dissolving a reducing agent and conductive metal precursors in a supercritical fluid or subcritical fluid; while reducing the metal oxide thin film formed on the surface of the substrate to a metal thin film, reducing the conductive metal precursors on the reduced metal thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.