Production method of semiconductor device
US7695999B2 · kind B2 · utility
0Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2006 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Dec 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/623
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.