Method for manufacturing semiconductor substrate
US7696059B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2008 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Oct 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A consistent reduction in temperature in an SOI substrate manufacturing process is achieved.A gate oxide film provided on an SOI substrate is obtained by laminating a low-temperature thermal oxide film 13 grown at a temperature of 450° C. or below and an oxide film 14 obtained based on a CVD method. Since the thermal oxide film 13 is a thin film of 100 Å or below, a low temperature of 450° C. or below can suffice. The underlying thermal oxide film 13 can suppress a structural defect, e.g., an interface state, and the CVD oxide film 14 formed on the thermal oxide film can be used to adjust a thickness of the gate oxide film. According to such a technique, a conventional general silicon oxide film forming apparatus can be used to form the gate oxide film at a low temperature, thereby achieving a consistent reduction in temperature in the SOI substrate manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.