Method for manufacturing vertical light-emitting diode
US7696068B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 9, 2008 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | May 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A method for manufacturing a vertical light-emitting diode is described. In the method for manufacturing the vertical light-emitting diode, a sapphire substrate is provided. An illuminant epitaxial structure is formed on the sapphire substrate. Next, a first conductivity type electrode is formed on a surface of the illuminant epitaxial structure. Then, a local removal step is performed to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure, wherein the other surface is opposite to the surface of the illuminant epitaxial structure. Subsequently, a second conductivity type electrode is formed on the exposed portion of the other surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.