Manufacturing methods of metal wire, electrode and TFT array substrate
US7696088B2 · kind B2 · utility
7Cited by
11References
6Claims
0Family size
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Key dates
| Filing date | Dec 18, 2007 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Mar 25, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/951
Abstract
A method of forming a gate line and gate electrode and a method of manufacturing a TFT array substrate. The metal gate line and gate electrode can be formed by: providing a substrate, forming a photoresist layer on the substrate, a photoresist pattern being formed complementary with that of the gate line and gate electrode, forming a metal Cu thin film or a composite thin film comprising a metal Cu thin film on the substrate, and removing the photoresist pattern and the metal Cu thin film or composite thin film comprising the metal Cu thin film formed thereon from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.