Rectifying diodes with self-aligned electrodes
US7696090B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Jul 2, 2004 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Apr 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/701
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A rectifying diode comprising a semiconducting layer, a first electrode, and a second electrode, wherein the width of the region of closest contact between the two electrodes is on the order of the thickness of the semiconducting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.