Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
US7696095B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2007 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Feb 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides auto-stopping CMP slurry compositions that minimize post-CMP non-uniformity and also extend the time that polishing can be continued beyond the end point without the risk of over-polishing the dielectric silicon dioxide film. Auto-stopping CMP slurry compositions according to the invention include ceria abrasive particles and an effective amount of a polyalkylamine such as polyethyleneimine dispersed in water. The methods of the invention include polishing a topographic dielectric silicon dioxide film layer using the auto-stopping CMP slurry compositions to obtain a dielectric silicon dioxide surface having a desired predetermined minimum step height.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.