Self-aligned masks using multi-temperature phase-change materials
US7696096B2 · kind B2 · utility
5Cited by
7References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2006 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Aug 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern includes forming a first layer on a substrate, forming a second layer on the first layer, depositing a multi-temperature phase-change material on the second layer, patterning the second layer using the multi-temperature phase-change material as a mask, reflowing the multi-temperature phase-change material, and patterning the first layer using the reflowed multi-temperature phase-change material as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.