Semiconductor photosensor device with sensitivity region for wide dynamic range and information apparatus
US7696467B2 · kind B2 · utility
4Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2007 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | May 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/94106
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor photosensor device includes a plurality of photodiode sections, a switch, and an output section is provided. The plurality of photodiode sections have different illuminance-output characteristics. The switch selects any one of the plurality of photodiode sections on the basis of an illuminance of incident light irradiated on the photodiode sections. The output section outputs an output signal from the selected photodiode section through the switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.