Phase change memory device
US7696504B2 · kind B2 · utility
0Cited by
1References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2007 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Feb 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase change memory device comprises an insulating layer and a phase change layer formed on the insulating layer. A phase change layer has a pad portion. The pad portion is formed with at least one slit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.