Split source RF MOSFET device
US7696572B2 · kind B2 · utility
0Cited by
8References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2005 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Aug 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
An RF MOS transistor having improved AC output conductance and AC output capacitance includes parallel interdigitated source and drain regions separated by channel regions and overlying gates. Grounded tap regions contacting an underlying well are placed contiguous to source regions and reduce distributed backgate resistance, lower backgate channel modulation, and lower output conductance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.