Back end thin film capacitor having both plates of thin film resistor material at single metallization layer
US7696603B2 · kind B2 · utility
4Cited by
6References
6Claims
0Family size
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Key dates
| Filing date | Jan 26, 2006 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Apr 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
An integrated circuit back end capacitor structure includes a first dielectric layer on a substrate, a thin film bottom plate on the first dielectric layer, and a second dielectric layer on the first dielectric layer and the bottom plate, and a thin film top plate disposed on the second dielectric layer. The thin film top plate and bottom plate are composed of thin film resistive layers, such as sichrome, which also are utilized to form back end thin film resistors having various properties. Interconnect conductors of a metallization layer contact the top and bottom plates through corresponding vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.