Patent · US Active

Non-volatile memory device including bistable circuit with pre-load and set phases and related system and method

US7697319B2 · kind B2 · utility

3Cited by

4References

50Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Laurent Dedieu · Le Champ-près-Froges, FR
Sebastien Lefebvre · Le Mans, FR

Key dates

Filing date	Feb 14, 2007
Grant date	Apr 13, 2010
Priority date	—
Expiry date	Feb 27, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH03K3/356104
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

An embodiment of a device for memorization of a memory bit is provided, comprising a bistable circuit having complementary first and second read/write terminals, wherein the device comprises an initialization input connected to said bistable circuit, said input being designed to go into a first state controlling a pre-load phase of said bistable circuit and following said preload phase, to go into a second state controlling setting up of said memory bit and its complement at said read/write terminals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.