Formation of microspheres through laser irradiation of a surface
US7700032B1 · kind B1 · utility
19Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2008 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Jul 14, 2028 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A laser ablation process is applied to a semiconductor substrate causing the semiconductor material surface and subsurface to be superheated to the point where material is ablated from the material substrate. Optional subsequent laser pulse(s) liquefy the particles, preferably while suspended in air, and the material surface tension causes the liquefied droplet of semiconductor material to form a sphere. The droplet preferably solidifies in air before reaching the substrate of its origin or another substrate for collection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.