Impurity introducing method using optical characteristics to determine annealing conditions
US7700382B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2004 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Sep 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A subject of the present invention is to realize an impurity doping not to bring about a rise of a substrate temperature.Another subject of the present invention is to measure optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized.An impurity doping method, includes a step of doping an impurity into a surface of a solid state base body, a step of measuring an optical characteristic of an area into which the impurity is doped, a step of selecting annealing conditions based on a measurement result to meet the optical characteristic of the area into which the impurity is doped, and a step of annealing the area into which the impurity is doped, based on the selected annealing conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.