Hybrid integration based on wafer-bonding of devices to AlSb monolithically grown on Si
US7700395B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Aug 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/183
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Exemplary embodiments provide a semiconductor fabrication method including a combination of monolithic integration techniques with wafer bonding techniques. The resulting semiconductor devices can be used in a wide variety of opto-electronic and/or electronic applications such as lasers, light emitting diodes (LEDs), phototvoltaics, photodetectors and transistors. In an exemplary embodiment, the semiconductor device can be formed by first forming an active-device structure including an active-device section disposed on a thinned III-V substrate. The active-device section can include OP and/or EP VCSEL devices. A high-quality monolithic integration structure can then be formed with low defect density through an interfacial misfit dislocation. In the high-quality monolithic integration structure, a thinned III-V mating layer can be formed over a silicon substrate. The thinned III-V substrate of the active-device structure can subsequently be wafer-bonded onto the thinned III-V mating layer of the high-quality monolithic integration structure forming an optoelectronic semiconductor device on silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.