Method for fabricating pixel structure
US7700483B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2008 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Nov 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A method for fabricating a pixel structure is provided. First, a substrate having an active device formed thereon is provided. The active device has a gate, a gate dielectric layer, and a semiconductor layer having a channel, a source, and a drain region. Then, a dielectric layer is formed to cover the active device, and a photo-resist layer having a first photo-resist block and a second photo-resist block thinner than the first photo-resist block is formed on the dielectric layer. The second photo-resist block has openings above the source and the drain region, respectively. The source and the drain regions are exposed by removing part of the dielectric layer with the photo-resist layer as a mask. A second metal layer is formed after removing the second photo-resist block. A source and a drain are formed after removing the first photo-resist block. A pixel electrode connected to the drain is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.