Thin film transistor device and method of manufacturing the same, and liquid crystal display device
US7700495B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2008 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Jun 20, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13454
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a thin film transistor device formed on an insulating substrate of a liquid crystal display device and others, a method of manufacturing the same, and a liquid crystal display device. In structure, there are provided the steps of forming a negative photoresist film on a first insulating film for covering a first island-like semiconductor film, forming a resist mask that has an opening portion in an inner region with respect to a periphery of the first island-like semiconductor film by exposing/developing the negative photoresist film from a back surface side of a transparent substrate, etching the first insulating film in the opening portion of the resist mask, forming a second insulating film for covering the first insulating film and a conductive film thereon, and forming a first gate electrode and a second gate electrode by patterning the conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.