Method of producing semiconductor porcelain composition
US7700509B2 · kind B2 · utility
3Cited by
2References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 31, 2006 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Mar 31, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of producing a semiconductor disk represented by a composition formula [(Bi0.5Na0.5)x(Ba1−yRy)1−x]TiO3, in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0≦x≦0.14, and 0.002≦y≦0.02 includes carrying out a sintering in an inert gas atmosphere with an oxygen concentration of 9 ppm to 1% and wherein a treatment at an elevated temperature in an oxidizing atmosphere after the sintering is not carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.