Transistor, method of fabricating the same and organic light emitting display including the transistor
US7700954B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Aug 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
Abstract
A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.