Pinned photodiode with high storage capacity, method of manufacture and image sensor incorporating same
US7701030B2 · kind B2 · utility
5Cited by
6References
9Claims
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Key dates
| Filing date | Dec 24, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Mar 31, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
In a photodiode formed by a region of a first type inside a region of a second type, of a semiconductor substrate, the region of the first type includes a first zone including a dopant of the first type having a first concentration and a first depth. The region of the first type also has a second zone adjacent to the first zone in the dopant of the first type has a second concentration higher than the first concentration and a second depth smaller than the first depth. A method for making such a diode is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.