Acoustic wave device and method for fabricating the same
US7701113B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2008 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Aug 14, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49165
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.