Magnetic memory composition and method of manufacture
US7701756B2 · kind B2 · utility
3Cited by
86References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2006 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Aug 27, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sensing device includes a sensor, a control unit, an input/output (I/O) interface, and a non-volatile magnetic memory device having one or more memory cells, each of the memory cells, wherein each memory cell of the non-volatile magnetic memory device includes a magnetic switch including a magnetic component and a write coil located proximate the magnetic component, the write coil coupled to receive a current sufficient to create a remnant magnetic polarity in the magnetic component, and a Hall sensor, positioned proximate the magnetic component, to detect the remnant magnetic polarity indicative of a stored data bit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.