Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
US7701797B2 · kind B2 · utility
7Cited by
56References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Dec 28, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods involve the use of a flash memory device having multiple flash memory cells. A first interface is adapted to receive power for selectively programming each flash memory cell. A second interface is adapted to receive power supplied to logic level circuitry to perform the selection of flash memory cells to be supplied with power from the first input during a write operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.