Silicon nitride film forming method
US7704556B2 · kind B2 · utility
0Cited by
17References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2007 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Apr 3, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.