Method for adjusting an electrical parameter on an integrated electronic component
US7704757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2001 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Oct 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for manufacturing an integrated electronic component arranged on a substrate wafer. According to the method, at least one metallization step is performed, and a value of an electrical parameter of the integrated electronic component is determined after the at least one metallization step. A subsequent metallization step is performed after determining the value of the electrical parameter. The subsequent metallization step is performed using an adjustment mask chosen from n predefined masks based on a desired value of the electrical parameter, so as to obtain the desired value of the electrical parameter of the integrated electronic component after manufacturing. In one preferred embodiment, a series of electrical tests is performed on the wafer using test equipment, and the value of the electrical parameter is determined using the same test equipment as is used to perform the series of electrical tests.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.