Patent · US Active

Light emitting device, method of manufacturing the same and monolithic light emitting diode array

US7704771B2 · kind B2 · utility

7Cited by
1References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 22, 2008
Grant dateApr 27, 2010
Priority date
Expiry dateAug 7, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857

Abstract

A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.