Method for producing semiconductor device
US7704777B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 9, 2008 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | May 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device includes bonding a transfer layer disposed on a first substrate to a second substrate and detaching the transfer layer from the first substrate. In bonding the transfer layer disposed on the first substrate to the second substrate, the method further includes placing a seal having a frame shape on a surface of the first substrate on which the transfer layer is disposed or a surface of the second substrate facing the first substrate, placing an adhesive in a region inside the seal, and superposing the surface of the first substrate on which the transfer layer is disposed on the second substrate with the seal and the adhesive. The seal and the adhesive are incompatible with each other. The seal and the adhesive are not cured in the period from placing the seal to superposing the surface of the first substrate on which the transfer layer is disposed on the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.