Methods for forming composite nanoparticle-metal metallization contacts on a substrate

US7704866B2 · kind B2 · utility

Assignee

• Innovalight, Inc. · US

Inventors

• Karel Vanheusden · Albuquerque, US
• Francesco Lemmi · Roma, IT
• Dmitry Poplavskyy · San Jose, US
• Mason Terry · Redwood City, US
• Malcolm Abbott · Sunnyvale, US

Key dates

• Filing date: Mar 18, 2008
• Grant date: Apr 27, 2010
• Expiry date: Oct 17, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/939

Abstract

A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.