Integration of thin film resistors having different TCRs into single die
US7704871B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 18, 2008 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Jan 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit structure including multiple thin film resistors having different sheet resistances and TCRs includes a first oxide layer (2) formed on a semiconductor substrate (1), a first thin film resistor (3) disposed on the first oxide layer (2), and a second oxide layer (14) disposed over the first oxide layer (2) and first thin film resistor (3). A second thin film resistor (15) is formed on the second oxide layer (14) and a third oxide layer (16) is formed over the second thin film resistor (15) and the second oxide layer (14). Interconnect metallization elements (12A,B & 22A,B) disposed on at least one of the second (14) and third (16) oxide layers electrically contact the circuit element (4), terminals of the first thin film resistor (3), and terminals of the second thin film resistor (15), respectively, through corresponding contact openings through at least one of the second (14) and third (16) oxide layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.