Semiconductor porcelain composition and method of producing the same
US7704906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2006 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Apr 28, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A semiconductor porcelain composition [(BiNa)x(Ba1-yRy)1-x]TiO3 with 0<x≦0.2, 0<y≦0.02 and R being selected from the group consisting of La, Dy, Eu, Gd or Y is prepared by separately calcining a composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders and forming and sintering the mixed calcined powder. Similarly, a semiconductor porcelain composition [(BiNa)x(Ba1-x][Ti1-zMz]O3 with 0<x≦0.2, 0<z≦0.005 and M being selected from the group consisting of Nb, Ta and Sb is prepared by separately calcining a composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders, and forming and sintering the mixed calcined powders.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.