Photodetector arrangement having a semiconductor body with plural layers and transistors, measurement arrangement with a photodetector arrangement and process for operating a measurement arrangement
US7705285B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 23, 2007 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Jul 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/957
Abstract
A photodetector arrangement has a semiconductor body formed of a substrate, a first layer at a first main surface of the semiconductor body, and a second layer at a second main surface of the semiconductor body. The second main surface is remote from the first main surface. A first and a second measurement terminal are arranged at the second main surface on the edge of the second layer in regions remote from one another and are formed for the electrical contact-connection of the second layer from outside the semiconductor body. A first and a second transistor couple the second layer to the first and respectively the second measurement terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.