Patent · US Active

Photodetector arrangement having a semiconductor body with plural layers and transistors, measurement arrangement with a photodetector arrangement and process for operating a measurement arrangement

US7705285B2 · kind B2 · utility

3Cited by
11References
18Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 23, 2007
Grant dateApr 27, 2010
Priority date
Expiry dateJul 7, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F77/957

Abstract

A photodetector arrangement has a semiconductor body formed of a substrate, a first layer at a first main surface of the semiconductor body, and a second layer at a second main surface of the semiconductor body. The second main surface is remote from the first main surface. A first and a second measurement terminal are arranged at the second main surface on the edge of the second layer in regions remote from one another and are formed for the electrical contact-connection of the second layer from outside the semiconductor body. A first and a second transistor couple the second layer to the first and respectively the second measurement terminal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.