Light-emitting device

US7705344B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Ting-Yang Lin · Baoshan, TW
• Shih-Kuo Lai · Hsinchu, TW
• Chen Ou · Hsinchu, TW

Key dates

• Filing date: Apr 8, 2008
• Grant date: Apr 27, 2010
• Expiry date: Apr 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8252

Abstract

A light-emitting device includes a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; wherein the active layer is a multi-quantum-well (MQW) active layer with a predetermined n-type doping profile. More specifically, the MQW active layer is doped with n-type dopants in the region near the p-type semiconductor layer and the n-type semiconductor layer, and the central region is not doped with the n-type dopants.