Surface acoustic wave device
US7705515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2008 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Oct 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02559
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, θ±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Cu, a first silicon oxide film disposed in a region other than the region in which the electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is within the range of about 0.12λ to about 0.18λ, where λ represents the wavelength of a surface acoustic wave, and θ of the above-described Euler angles of (0°±5°, θ±5°, 0°±10°) is in the range satisfying the following Formula (1):θ=32.01−351.92×exp(−TCu/0.0187) Formula (1)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.