Patent · US Active

Image sensor

US7705905B2 · kind B2 · utility

0Cited by
1References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 13, 2006
Grant dateApr 27, 2010
Priority date
Expiry dateJan 1, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/8067

Abstract

An image sensor pixel structure including: a photosensitive area surrounded with a peripheral area placed at the surface of a semiconductor substrate, a stack of several insulating layers alternately exhibiting different refraction coefficients and placed above the peripheral area, a microlens placed at the top of the pixel to have the pixel light converge towards the photosensitive area, and a transparent block placed substantially above the photosensitive area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.