Image sensor
US7705905B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 13, 2006 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Jan 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
Abstract
An image sensor pixel structure including: a photosensitive area surrounded with a peripheral area placed at the surface of a semiconductor substrate, a stack of several insulating layers alternately exhibiting different refraction coefficients and placed above the peripheral area, a microlens placed at the top of the pixel to have the pixel light converge towards the photosensitive area, and a transparent block placed substantially above the photosensitive area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.