Patent · US Active

Low thermal coefficient of resistivity on-slider tunneling magneto-resistive shunt resistor

US7706109B2 · kind B2 · utility

18Cited by
16References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 17, 2006
Grant dateApr 27, 2010
Priority date
Expiry dateJul 13, 2028

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11B5/6005
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A slider includes a Tunneling Magneto-Resistive (TuMR) read sensor and a shunt resistor connected in parallel. The shunt resistor may be located in a read structure of the slider. The shunt resistor may reduce a total resistance of the read structure and any corresponding impedance mismatch between the read structure, a transmission line, and a preamplifier. The shunt resistor may be made of a material having a near zero thermal coefficient of resistivity (TCR) to test a quality of the TuMR read sensor. The TuMR read sensor may be deemed defective if its TCR deviates from a population average by a specific criterion. The TuMR read sensor may include a MgO tunneling barrier to improve signal strength. The TuMR read sensor may include a free layer that is able to be saturated with a perpendicular background field to calculate a more accurate TCR of the TuMR read sensor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.