Patent · US Active

FET-based gas sensor

US7707869B2 · kind B2 · utility

1Cited by

13References

28Claims

0Family size

Assignee

Micronas GmbH · DE

Inventors

Maximilian Fleischer · Ehrenkirchen, DE
Hans Meixner · Haar, DE
Elfriede Simon · Munich, DE
Uwe Lampe · Buxtehude, DE
Roland Pohle · Füssen, DE

Key dates

Filing date	Apr 21, 2005
Grant date	May 4, 2010
Priority date	—
Expiry date	Jul 15, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/4143
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An operating method is disclosed for the selective detection of a target gas in a gas mixture to be measured by a field effect transistor with a gas-sensitive layer disposed on a carrier substrate, wherein the gas mixture to be measured is prepared by an electrochemical element such that the measured gas mixture includes minimal amounts of interfering gases that interfere with the measurement of the target gas, and/or at least one target gas is activated such that it is detected by the gas-sensitive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.