Method and apparatus for measuring temperature on a silicon device
US7708460B1 · kind B1 · utility
1Cited by
6References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Apr 29, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for measuring temperature on a silicon device includes activating a heat source on the silicon device. A value of a parameter of an electronic component on the silicon device is measured. A temperature associated with the electronic component is determined from the value of the parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.