Semiconductor laser with narrow beam divergence
US7709280B2 · kind B2 · utility
1Cited by
13References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 18, 2008 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Oct 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a method of reducing vertical divergence of a high-power semiconductor laser with a negligible threshold current and conversion efficiency penalty. The low divergence is achieved by increasing the thickness of the n-cladding layer in an asymmetric laser diode stack structure, to a value ranging from 1 to 4 times the laser mode size measured at 10% level. The divergence may be tuned by adjusting the n-cladding layer parameters in an area of the tail the optical mode, measuring 0.03% or less of the maximal optical power density of said optical mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.